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| SI8409DB New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 FEATURES ID (A) -6.3 -5.3 rDS(on) (W) 0.046 @ VGS = -4.5 V 0.065 @ VGS = -2.5 V Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area D Pin Compatible to Si8401DB APPLICATIONS D Load Switch, Battery Switch, and PA Switch for Portable Devices S MICRO FOOT Bump Side View 3 D D 2 Backside View G 8409 xxx Device Marking: 8409 xxx = Date/Lot Traceability Code Ordering Information: SI8409DB-T1--E1 D P-Channel MOSFET S 4 G 1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Package Reflow Conditionsb VPR IR/Convection TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State -30 "12 Unit V -6.3 -5.1 -25 -2.5 2.77 1.77 -55 to 150 215 220 -4.6 -3.7 A -1.3 1.47 0.94 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 35 72 16 Maximum 45 85 20 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. Document Number: 73111 S-41816--Rev. A, 11-Oct-04 www.vishay.com 1 SI8409DB Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 70_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1 A VGS = -2.5 V, ID = -1 A VDS = -10 V, ID = -1 A IS = -1 A, VGS = 0 V -5 0.038 0.052 6.4 -0.8 -1.1 0.046 0.065 -0.6 -1.4 "100 -1 -5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -1 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W f = 1MHz VDS = -10 V, VGS = -4.5 V, ID = -1 A 17 2.2 5.7 22 20 35 140 90 85 30 55 210 135 130 ns W 26 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 5 thru 3 V 25 2.5 V 20 I D - Drain Current (A) Transfer Characteristics 20 I D - Drain Current (A) 15 2V 10 15 10 TC = 125_C 5 25_C -55_C 5 1.5 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Document Number: 73111 S-41816--Rev. A, 11-Oct-04 2 SI8409DB New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.16 0.14 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 5 10 15 20 25 0 0 5 10 15 20 25 30 VGS = 2.5 V VGS = 4.5 V 1200 Ciss 900 Vishay Siliconix On-Resistance vs. Drain Current 1500 Capacitance 600 Coss Crss 300 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 1 A Gate Charge 1.6 1.5 1.4 rDS(on) - On-Resiistance (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1 A 4 3 2 1 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 ID = 1 A 0.06 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 73111 S-41816--Rev. A, 11-Oct-04 www.vishay.com 3 SI8409DB Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.5 0.4 V GS(th) Variance (V) 0.3 0.2 0.1 0.0 -0.1 -0.2 -50 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 20 Power (W) ID = 250 mA 60 80 Single Pulse Power, Juncion-To-Ambient 40 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) 100 Safe Operating Area IDM Limited * rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified P(t) = 1 P(t) = 10 dc 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 72_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 73111 S-41816--Rev. A, 11-Oct-04 SI8409DB New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73111 S-41816--Rev. A, 11-Oct-04 www.vishay.com 5 SI8409DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 X 2, 0.8-mm PITCH) 4 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 New Product e A A2 A1 Bump Note 2 b Diamerter e Recommended Land S Silicon E e 8409 XXX e D Mark on Backside of Die NOTES (Unless Otherwise Specified): 1. 2. 3. 4. Laser mark on the silicon die back, coated with a thin metal. Bumps are lead (Pb)-free. Non-solder mask defined copper landing pad. The flat side of wafers is oriented at the bottom. S MILLIMETERS* Dim A A1 A2 b D E e S Min 0.600 0.260 0.340 0.370 1.520 1.520 0.750 0.370 INCHES Min 0.0236 0.0102 0.0134 0.0146 0.0598 0.0598 0.0295 0.0146 Max 0.650 0.290 0.360 0.410 1.600 1.600 0.850 0.380 Max 0.0256 0.0114 0.0142 0.0161 0.0630 0.0630 0.0335 0.0150 * Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73111. www.vishay.com Document Number: 73111 S-41816--Rev. A, 11-Oct-04 6 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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